FDN352AP
RoHS

FDN352AP

FDN352AP

onsemi

MOSFET P-CH 30V 1.3A SUPERSOT3

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FDN352AP

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Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageSuperSOT-3
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs180 mOhm @ 1.3A, 10V
Power Dissipation (Max)500mW (Ta)
PackagingOriginal-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Other NamesFDN352APDKR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time42 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs1.9nC @ 4.5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)