Availability:
16732
pieces
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-3PN
SeriesQFET®
Rds On (Max) @ Id, Vgs90 mOhm @ 16.5A, 10V
Power Dissipation (Max)227W (Tc)
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Other NamesQ2458553
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time5 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)150V
Detailed DescriptionN-Channel 150V 33A (Tc) 227W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25°C33A (Tc)
