Availability:
16220
pieces
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesQFET®
Rds On (Max) @ Id, Vgs270 mOhm @ 7.8A, 10V
Power Dissipation (Max)139W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs53.5nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)250V
Detailed DescriptionN-Channel 250V 15.6A (Tc) 139W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C15.6A (Tc)
