Availability:
16528
pieces
Specification
Vgs(th) (Max) @ Id1.5V @ 250µA
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageChipFET™
Series-
Rds On (Max) @ Id, Vgs25 mOhm @ 5.4A, 4.5V
Power Dissipation (Max)1.3W (Ta)
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Other NamesNTHS2101PT1GOS
NTHS2101PT1GOS-ND
NTHS2101PT1GOSTR
Operating Temperature-
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 6.4V
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Drain to Source Voltage (Vdss)8V
Detailed DescriptionP-Channel 8V 5.4A (Tj) 1.3W (Ta) Surface Mount ChipFET™
Current - Continuous Drain (Id) @ 25°C5.4A (Tj)
