Availability:
16779
pieces
Specification
Vgs(th) (Max) @ Id2V @ 250µA
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageSOT-223
Series-
Rds On (Max) @ Id, Vgs540 mOhm @ 900mA, 5V
Power Dissipation (Max)2W (Ta), 3.1W (Tc)
PackagingTube
Package / CaseTO-261-4, TO-261AA
Other Names*IRLL110
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs6.1nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
