SI2367DS-T1-GE3
RoHS

SI2367DS-T1-GE3

SI2367DS-T1-GE3

Vishay

MOSFET P-CH 20V 3.8A SOT-23

Download Datasheet

SI2367DS-T1-GE3

Availability: 18162 pieces
Request Quotation
Specification
RoHSCompliant
MountSurface Mount
Weight1.437803 g
Fall Time9 ns
Lead FreeLead Free
Rise Time9 ns
REACH SVHCUnknown
Rds On Max66 mΩ
Resistance66 MΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance561 pF
Power Dissipation960 mW
Threshold Voltage-400 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time8 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance66 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)3.8 A
Drain to Source Voltage (Vdss)-20 V