SI2399DS-T1-GE3
| Part No | SI2399DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 6A SOT-23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18519
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4018 | |
| 10 | 0.3938 | |
| 100 | 0.3817 | |
| 1000 | 0.3697 | |
| 10000 | 0.3536 |
Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time9 ns
Lead FreeLead Free
PackagingTape & Reel (TR)
Rise Time20 ns
REACH SVHCNo SVHC
Rds On Max34 mΩ
Schedule B8541290080
Nominal Vgs-600 mV
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance835 pF
Power Dissipation1.25 W
Threshold Voltage-600 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time22 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance28 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)-6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V
