SI5853CDC-T1-E3
RoHS

SI5853CDC-T1-E3

SI5853CDC-T1-E3

Vishay

MOSFET P-CH 20V 4A 1206-8

Download Datasheet

SI5853CDC-T1-E3

Availability: 16808 pieces
Request Quotation
Specification
RoHSCompliant
MountSurface Mount
Fall Time15 ns
Lead FreeLead Free
Rise Time15 ns
Rds On Max104 mΩ
Resistance104 mΩ
Case/PackageSMD/SMT
Number of Pins8
Input Capacitance350 pF
Number of Channels1
Turn-On Delay Time5 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Max Power Dissipation3.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance104 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)2.9 A
Drain to Source Voltage (Vdss)20 V