SI7110DN-T1-GE3
| Part No | SI7110DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 20V 13.5A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
23878
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.7138 | |
| 10 | 1.6795 | |
| 100 | 1.6281 | |
| 1000 | 1.5767 | |
| 10000 | 1.5081 |
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Rise Time10 ns
REACH SVHCUnknown
Rds On Max5.3 mΩ
Number of Pins8
Threshold Voltage2.5 V
Number of Channels1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time36 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.3 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)13.5 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
