SI7129DN-T1-GE3
RoHS

SI7129DN-T1-GE3

SI7129DN-T1-GE3

Vishay

MOSFET P-CH 30V 35A 1212-8

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SI7129DN-T1-GE3

Availability: 22899 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time14 ns
Lead FreeLead Free
Rise Time43 ns
Rds On Max11.4 mΩ
Resistance11.4 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Number of Pins8
Contact PlatingTin
Input Capacitance3.345 nF
Power Dissipation3.8 W
Number of Channels1
Number of Elements1
Turn-On Delay Time50 ns
Radiation HardeningNo
Turn-Off Delay Time36 ns
Max Power Dissipation52.1 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance16 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)14.4 A
Drain to Source Voltage (Vdss)30 V