SI7382DP-T1-E3
RoHS

SI7382DP-T1-E3

SI7382DP-T1-E3

Vishay

MOSFET N-CH 30V 14A PPAK SO-8

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SI7382DP-T1-E3

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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time16 ns
Lead FreeLead Free
Rise Time16 ns
Rds On Max4.7 mΩ
Resistance4.7 mΩ
Number of Channels1
Turn-On Delay Time18 ns
Turn-Off Delay Time67 ns
Element ConfigurationSingle
Max Power Dissipation1.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)14 A
Drain to Source Voltage (Vdss)30 V