SI8417DB-T2-E1
RoHS

SI8417DB-T2-E1

SI8417DB-T2-E1

Vishay

MOSFET P-CH 12V 14.5A 2X2 6MFP

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SI8417DB-T2-E1

Availability: 19105 pieces
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Specification
RoHSCompliant
MountSurface Mount
Fall Time240 ns
Rise Time25 ns
Rds On Max21 mΩ
Number of Pins6
Input Capacitance2.22 nF
Power Dissipation2.9 W
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time380 ns
Max Power Dissipation6.57 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance21 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)9.7 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage-12 V