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Specification
Collector-Emitter Breakdown Voltage (Vceo)400V
Power Dissipation (Pd)500mW
Collector Current (Ic)200mA
DC Current Gain (hFE@Ic,Vce)100@50mA,1V
Transition Frequency (fT)70MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)600mV@50mA,5mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)