2SB649A
RoHS

2SB649A

2SB649A

Changjiang Electronics

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2SB649A

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Specification
Collector Cut-Off Current (Icbo)10u03bcA
Collector-Emitter Breakdown Voltage (Vceo)160V
Power Dissipation (Pd)1W
Collector Current (Ic)1.5A
DC Current Gain (hFE@Ic,Vce)100@150mA,5V
Transition Frequency (fT)140MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@500mA,50mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)