
Availability:
19035
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)60V
Power Dissipation (Pd)800mW
Collector Current (Ic)700mA
DC Current Gain (hFE@Ic,Vce)70@50mA,2V
Transition Frequency (fT)30MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@500mA,50mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)