
Availability:
19112
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)500mW
Collector Current (Ic)1A
DC Current Gain (hFE@Ic,Vce)135@100mA,2V
Transition Frequency (fT)160MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@500mA,50mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)