
Availability:
16429
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)350mW
Collector Current (Ic)2A
DC Current Gain (hFE@Ic,Vce)40@6A,2V
Transition Frequency (fT)150MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)220mV@2A,100mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)