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Specification
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)310mW
Collector Current (Ic)1A
DC Current Gain (hFE@Ic,Vce)100@500mA,2V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)650mV@2A,200mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)