
Availability:
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Specification
Collector-Emitter Breakdown Voltage (Vceo)65V
Power Dissipation (Pd)300mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)180@2mA,5V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@100mA,5mA
Transistor TypeNPN
Operating Temperature-65u2103~+150u2103@(Tj)