
Availability:
22847
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)1W
Collector Current (Ic)1A
DC Current Gain (hFE@Ic,Vce)100@100mA,5V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@500mA,50mA
Transistor TypeNPN
Operating Temperature-65u2103~+150u2103@(Tj)