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Specification
Collector-Emitter Breakdown Voltage (Vceo)120V
Power Dissipation (Pd)900mW
Collector Current (Ic)800mA
DC Current Gain (hFE@Ic,Vce)120@100mA,5V
Transition Frequency (fT)120MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@500mA,50mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)