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Specification
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)150mW
Collector Current (Ic)50mA
DC Current Gain (hFE@Ic,Vce)120@2mA,12V
Transition Frequency (fT)400MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@10mA,1mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)