
Availability:
21292
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)500mW
Collector Current (Ic)2A
DC Current Gain (hFE@Ic,Vce)-
Transition Frequency (fT)200MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)350mV@1A,50mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)