
Availability:
17950
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)200mW
Collector Current (Ic)150mA
DC Current Gain (hFE@Ic,Vce)-
Transition Frequency (fT)150MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@100mA,10mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)