IXTP3N100P
| Part No | IXTP3N100P |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 1000V 3A TO220AB |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
14890
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.185 | |
| 10 | 4.1013 | |
| 100 | 3.9757 | |
| 1000 | 3.8502 | |
| 10000 | 3.6828 |
Specification
PackageTube
SeriesPolar P3™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.8Ohm @ 1.5A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs39 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1100 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
