IPD082N10N3GATMA1
| Part No | IPD082N10N3GATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 100V 80A TO252-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
15924
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.1614 | |
| 10 | 2.1182 | |
| 100 | 2.0533 | |
| 1000 | 1.9885 | |
| 10000 | 1.902 |
Specification
RoHSCompliant
MountSurface Mount
Fall Time8 ns
Lead FreeLead Free
PackagingTape & Reel
Rise Time42 ns
Rds On Max8.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Number of Pins3
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Package Quantity2500
Input Capacitance2.99 nF
Power Dissipation125 W
Turn-On Delay Time18 ns
On-State Resistance8.2 mΩ
Turn-Off Delay Time31 ns
Max Power Dissipation125 W
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)80 A
Drain to Source Voltage (Vdss)100 V
