IPD33CN10NGATMA1
| Part No | IPD33CN10NGATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 100V 27A TO252-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
16245
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2936 | |
| 10 | 1.2677 | |
| 100 | 1.2289 | |
| 1000 | 1.1901 | |
| 10000 | 1.1384 |
Specification
RoHSCompliant
MountSurface Mount
Fall Time4 ns
Lead FreeContains Lead
PackagingTape & Reel
Rise Time21 ns
Rds On Max33 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Halogen FreeHalogen Free
Number of Pins3
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity2500
Input Capacitance1.18 nF
Power Dissipation58 W
Turn-On Delay Time11 ns
On-State Resistance33 mΩ
Turn-Off Delay Time17 ns
Max Power Dissipation58 W
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance25 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)27 A
Drain to Source Voltage (Vdss)100 V
