IPT012N08N5ATMA1
| Part No | IPT012N08N5ATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 80V 300A 8HSOF |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19778
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.922 | |
| 10 | 5.8036 | |
| 100 | 5.6259 | |
| 1000 | 5.4482 | |
| 10000 | 5.2114 |
Specification
RoHSCompliant
MountSurface Mount
Height2.4 mm
Fall Time30 ns
Lead FreeContains Lead
PackagingTape & Reel
Rise Time31 ns
REACH SVHCNo SVHC
Rds On Max1.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/Package300
Halogen FreeHalogen Free
Number of Pins8
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity2000
Input Capacitance13 nF
Power Dissipation375 W
Threshold Voltage3 V
Number of Channels1
Turn-On Delay Time35 ns
On-State Resistance1.2 mΩ
Turn-Off Delay Time82 ns
Element ConfigurationSingle
Max Power Dissipation375 W
Max Dual Supply Voltage80 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance1 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)300 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)80 V
Manufacturer Package IdentifierPG-HSOF-8
Drain to Source Breakdown Voltage80 V
