Availability:
17999
pieces
Specification
Vgs(th) (Max) @ Id2.4V @ 50µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageDIRECTFET™ SQ
SeriesHEXFET®
Rds On (Max) @ Id, Vgs3 mOhm @ 22A, 10V
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric SQ
Other NamesSP001532360
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2880pF @ 13V
Gate Charge (Qg) (Max) @ Vgs32nC @ 4.5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)25V
Detailed DescriptionN-Channel 25V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
Current - Continuous Drain (Id) @ 25°C22A (Ta), 95A (Tc)
