Availability:
21177
pieces
Specification
Vgs(th) (Max) @ Id1V @ 250µA
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SO
SeriesHEXFET®
Rds On (Max) @ Id, Vgs12 mOhm @ 15A, 4.5V
Power Dissipation (Max)3.1W (Ta)
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Other NamesIRF7811WPBFTR
IRF7811WTRPBF-ND
IRF7811WTRPBFTR-ND
SP001563666
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2335pF @ 16V
Gate Charge (Qg) (Max) @ Vgs33nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 14A (Ta) 3.1W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C14A (Ta)
