Availability:
16201
pieces
Specification
Vgs(th) (Max) @ Id1V @ 250µA
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-Pak
SeriesHEXFET®
Rds On (Max) @ Id, Vgs19 mOhm @ 33A, 10V
Power Dissipation (Max)107W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 55A (Tc) 107W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C55A (Tc)
