
Availability:
15100
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)350mW
Collector Current (Ic)600mA
DC Current Gain (hFE@Ic,Vce)100@150mA,1V
Transition Frequency (fT)250MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)750mV@500mA,50mA
Transistor Type-
Operating Temperature+150u2103@(Tj)