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Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)200mW
Collector Current (Ic)150mA
DC Current Gain (hFE@Ic,Vce)-
Transition Frequency (fT)180MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)180mV@100mA,10mA
Transistor TypePNP
Operating Temperature-55u2103~+150u2103@(Tj)