Availability:
11469
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8736 | |
| 10 | 0.8561 | |
| 100 | 0.8299 | |
| 1000 | 0.8037 | |
| 10000 | 0.7688 |
Specification
PackageBag
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C350mA (Tj)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)3Ohm @ 1A, 10V
RdsOn(Max)@Id2.4V @ 1mA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)65 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-92-3
SupplierDevicePackageTO-226-3, TO-92-3 (TO-226AA)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
