
Availability:
12676
Pricing
Quantity | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.6731 | |
10 | 1.6396 | |
100 | 1.5894 | |
1000 | 1.5393 | |
10000 | 1.4723 |
Specification
PackageBag
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C640mA (Tj)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)1.2Ohm @ 1A, 10V
RdsOn(Max)@Id2.5V @ 1mA
Vgs-
Vgs(th)(Max)@Id±30V
Vgs(Max)190 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-92-3
SupplierDevicePackageTO-226-3, TO-92-3 (TO-226AA)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification