Availability:
11667
pieces
Specification
PackageBulk
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)175mOhm @ 10A, 20V
RdsOn(Max)@Id2.5V @ 1mA
Vgs72 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature175W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
