
Availability:
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Specification
Collector-Emitter Breakdown Voltage (Vceo)32V
Power Dissipation (Pd)250mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)215@2mA,5V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)150mV@50mA,2.5mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)