Availability:
11798
pieces
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C21A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)156mOhm @ 6.7A, 18V
RdsOn(Max)@Id5.6V @ 3.33mA
Vgs38 nC @ 18 V
Vgs(th)(Max)@Id+22V, -4V
Vgs(Max)460 pF @ 500 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature103W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247N
SupplierDevicePackageTO-247-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
