PDTC114TE
RoHS

PDTC114TE

PDTC114TE

Shanghai Prisemi Elec

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PDTC114TE

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Specification
Operating Temperature+150u2103@(Tj)
DC Current Gain (hFE@Ic,Vce)250@1mA,5V
Output Voltage (VO(on)@Io/Ii)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@5mA,250u03bcA
Input Resistor10ku03a9
Resistor Ratio-
Transition Frequency (fT)250MHz
Power Dissipation (Pd)150mW
Input Voltage (VI(on)@Ic,Vce)-
Collector Current (Ic)100mA
Input Voltage (VI(off)@Ic,Vce)-
Collector-Emitter Breakdown Voltage (Vceo)50V
Collector Cut-Off Current (Icbo)500nA
Transistor TypeNPN - u9884u504fu538b