2SB806
RoHS

2SB806

2SB806

Shikues

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2SB806

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Specification
Collector-Emitter Breakdown Voltage (Vceo)120V
Power Dissipation (Pd)2W
Collector Current (Ic)0.7A
DC Current Gain (hFE@Ic,Vce)45@5mA,1V
Transition Frequency (fT)75MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@500mA,50mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)