
Availability:
10843
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)25V
Power Dissipation (Pd)625mW
Collector Current (Ic)800mA
DC Current Gain (hFE@Ic,Vce)120@800mA,1V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@800mA,80mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)