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Specification
Collector-Emitter Breakdown Voltage (Vceo)100V
Power Dissipation (Pd)2W
Collector Current (Ic)0.7A
DC Current Gain (hFE@Ic,Vce)45@5mA,1V
Transition Frequency (fT)90MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@500mA,50mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)