BUJD203AD
RoHS

BUJD203AD

BUJD203AD

WeEn Semiconductors

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BUJD203AD

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Specification
Collector Cut-Off Current (Icbo)1mA
Collector-Emitter Breakdown Voltage (Vceo)425V
Power Dissipation (Pd)80W
Collector Current (Ic)4A
DC Current Gain (hFE@Ic,Vce)15@1mA,5V
Transition Frequency (fT)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)290mV@3A,600mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)